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- Ceramic Heater
- AlN HEATER
- High thermal uniformity and wide operating temperature range
- It is made of highly thermally conductive materials (AlN) and ensures thermal uniformity (<±1%) at high temperatures over a wide temperature range (up to 800°C).
- Compact / Outstanding Confidentiality
- The resistance heating element and RF electrode are sintered inside the AlN ceramic, and the ceramic shaft is directly bonded to the heater plate.
- High corrosion resistance
- Excellent corrosion resistance to halogen gas and oxidizing environments.
- Wafer chucking function
- The RF electrode is internally sintered on the ceramic plate. It can be used as an electrostatic chuck electrode for wafer chucking. (Vacuum chuck function can also be implemented)
- Prevent RF electrode terminal damage
- Our improved manufacturing technology minimizes damage to RF electrode terminals even with prolonged use.
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Specification Max. Using Temp. 650℃(RF) / 800℃(Thermal) Size 200,300mm(Wafer Size) Temperature uniformity <±1% Power 220V, 50/60Hz Electrode Ni rod Material AlN Heater Element Mo, Coil, (Single, Dual) RF/ESC Electrode Mo, Mesh AlN Material Properties Purity 95~99% Density 3.3g/cm3 Thermal Conductivity ~180W/m*K Thermal Expansion < 4.2x10-6/℃ Dielectric Strength > 15KV/mm Dielectric Constant 8.7 at 1MHz Volume Resistivity > 1014Ωxcm Flexural Strength 320Mpa -
Size 200 PE/ARC PRODUCER CxZ PRODUCER 300 PE/ARC PRODUCER HARP PRODUCER HARP, V7 PRODUCER ACL PRODUCER Polygen CENTURA Ti/TiN Trias
- AlN HEATER
- info
- High thermal uniformity and wide operating temperature range
- It is made of highly thermally conductive materials (AlN) and ensures thermal uniformity (<±1%) at high temperatures over a wide temperature range (up to 800°C).
- Compact / Outstanding Confidentiality
- The resistance heating element and RF electrode are sintered inside the AlN ceramic, and the ceramic shaft is directly bonded to the heater plate.
- High corrosion resistance
- Excellent corrosion resistance to halogen gas and oxidizing environments.
- Wafer chucking function
- The RF electrode is internally sintered on the ceramic plate. It can be used as an electrostatic chuck electrode for wafer chucking. (Vacuum chuck function can also be implemented)
- Prevent RF electrode terminal damage
- Our improved manufacturing technology minimizes damage to RF electrode terminals even with prolonged use.
-
Specification Max. Using Temp. 650℃(RF) / 800℃(Thermal) Size 200,300mm(Wafer Size) Temperature uniformity <±1% Power 220V, 50/60Hz Electrode Ni rod Material AlN Heater Element Mo, Coil, (Single, Dual) RF/ESC Electrode Mo, Mesh AlN Material Properties Purity 95~99% Density 3.3g/cm3 Thermal Conductivity ~180W/m*K Thermal Expansion < 4.2x10-6/℃ Dielectric Strength > 15KV/mm Dielectric Constant 8.7 at 1MHz Volume Resistivity > 1014Ωxcm Flexural Strength 320Mpa -
Size 200 PE/ARC PRODUCER CxZ PRODUCER 300 PE/ARC PRODUCER HARP PRODUCER HARP, V7 PRODUCER ACL PRODUCER Polygen CENTURA Ti/TiN Trias
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